MRF6V2150NR1 Freescale Semiconductor, MRF6V2150NR1 Datasheet - Page 6

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MRF6V2150NR1

Manufacturer Part Number
MRF6V2150NR1
Description
MOSFET RF N-CH TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V2150NR1

Transistor Type
N-Channel
Frequency
220MHz
Gain
25dB
Voltage - Rated
110V
Current Rating
2.5mA
Current - Test
450mA
Voltage - Test
50V
Power - Output
150W
Package / Case
TO-270-4
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-

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Manufacturer
Quantity
Price
Part Number:
MRF6V2150NR1
Manufacturer:
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Part Number:
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Manufacturer:
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6
MRF6V2150NR1 MRF6V2150NBR1
26
24
22
20
18
16
14
28
27
26
25
24
23
22
21
0
5
25_C
85_C
Figure 10. Power Gain versus Output Power
Figure 12. Power Gain and Drain Efficiency
T
C
= --30_C
10
V
DD
50
P
η
P
= 20 V
versus CW Output Power
out
D
out
25 V
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) CW
30 V
G
ps
100
35 V
40 V
V
f = 220 MHz
I
DQ
DD
85_C
= 450 mA
= 50 Vdc
150
TYPICAL CHARACTERISTICS
45 V
I
f = 220 MHz
100
DQ
25_C
= 450 mA
--30_C
50 V
200
200
80
70
60
50
40
30
20
10
10
10
10
10
55
50
45
40
35
8
7
6
5
90
10
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. Power Output versus Power Input
110
15
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
25_C
P
150
in
, INPUT POWER (dBm)
20
T
C
out
= --30_C
170
= 150 W CW, and η
Freescale Semiconductor
25
190
V
I
f = 220 MHz
DQ
85_C
DD
210
RF Device Data
= 450 mA
= 50 Vdc
D
30
= 68.3%.
230
250
35

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