MRF6S18100NR1 Freescale Semiconductor, MRF6S18100NR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6S18100NR1
• Description: MOSFET RF N-CH 28V 100W TO2704
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S18100NR1

• Transistor Type: N-Channel
• Frequency: 1.99GHz
• Gain: 14.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 100W
• Package / Case: TO-270-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
MRF6S18100NR1 MRF6S18100NBR1
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V
1805- 1880 MHz or 1930 - 1990 MHz EDGE Modulation
Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) V
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Input Return Loss
P
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
1. Part internally matched both on input and output.
out
out
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
@ 1 dB Compression Point
@ 1 dB Compression Point
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
GS
GS
= 330 μAdc)
= 900 mAdc, Measured in Functional Test)
= 3.3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Test Methodology
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, P
out
Symbol
V
Rating
V
V
DD
P1dB
P1dB
EVM
I
I
I
DS(on)
SR1
SR2
C
GS(th)
GS(Q)
G
G
G
GSS
IRL
IRL
DSS
DSS
η
η
η
= 100 W, I
3
rss
= 28 Vdc, I
ps
ps
ps
D
D
D
DQ
DQ
Min
100
Package Peak Temperature
1.6
1.5
DD
—
—
—
—
—
13
47
—
—
—
—
—
—
—
—
—
—
= 900 mA, f = 1990 MHz
= 900 mA, P
= 28 Vdc, I
0.24
14.5
14.5
260
Typ
110
110
- 12
- 63
- 76
- 12
2.8
1.5
49
15
35
49
—
—
—
1B (Minimum)
2
DQ
2
IV (Minimum)
out
A (Minimum)
= 700 mA, P
= 100 W, 1805 - 1880 MHz
Class
Freescale Semiconductor
Max
500
3.5
10
16
—
—
—
—
—
—
—
—
—
—
—
—
—
- 9
1
3
RF Device Data
out
= 40 W Avg.,
% rms
μAdc
μAdc
nAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
dB
dB
°C
pF
W
W
%
%
%