MRF7P20040HSR5 Freescale Semiconductor, MRF7P20040HSR5 Datasheet - Page 2

• Manufacturer Part Number: MRF7P20040HSR5
• Description: MOSFET RF N-CH 40W NI780HS-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF7P20040HSR5

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 2.03GHz
• Gain: 18.2dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 150mA
• Voltage - Test: 32V
• Power - Output: 10W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
MRF7P20040HR3 MRF7P20040HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical Performance
2010--2025 MHz Bandwidth
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
P
P
IMD Symmetry @ 15 W PEP, P
VBW Resonance Point
Gain Flatness in 15 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
out
out
(V
(V
(V
(V
(V
(V
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
DS
DS
GS
DS
DD
GS
@ 1 dB Compression Point, CW
@ 3 dB Compression Point, CW
= 65 Vdc, V
= 32 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 32 Vdc, I
= 10 Vdc, I
(2,3)
DS

D
DA
D
(1)
(1)
GS
GS
(4)
= 33.5 μAdc)
= 0.325 Adc)
(In Freescale Doherty Test Fixture, 50 ohm system) V
(3)
= 0 Vdc)
= 150 mAdc, Measured in Functional Test)
30 dBc
= 0 Vdc)
= 0 Vdc)
(In Freescale Doherty Test Fixture, 50 ohm system) V
Characteristic
out
Test Methodology
where IMD Third Order
(4)
(T
out
A
= 25°C unless otherwise noted)
= 10 W Avg.
DD
Symbol
IMD
VBW
V
V
V
DD
∆P1dB
= 32 Vdc, I
ACPR
P1dB
P3dB
I
I
I
PAR
DS(on)
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
∆G
η
G
= 32 Vdc, I
ps
D
sym
F
res
DQA
DQA
Min
1.2
0.1
6.9
16
39
—
—
—
—
—
—
—
—
—
—
—
—
= 150 mA, V
2
= 150 mA, V
0.013
0.006
--34.8
--17.8
0.24
18.2
42.6
0.04
Typ
GSB
2.7
7.3
35
50
70
—
—
—
2
8
1A (Minimum)
IV (Minimum)
B (Minimum)
GSB
= 1.5 Vdc, P
Class
Freescale Semiconductor
= 1.5 Vdc,
Max
--30
--10
2.7
3.5
0.3
10
21
—
—
—
—
—
—
—
—
—
1
1
RF Device Data
out
= 10 W Avg.,
dB/°C
dB/°C
μAdc
μAdc
μAdc
MHz
MHz
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
dB
dB
W
W
%