MRF7S19080HR3 Freescale Semiconductor, MRF7S19080HR3 Datasheet - Page 15

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MRF7S19080HR3

Manufacturer Part Number
MRF7S19080HR3
Description
MOSFET RF N-CH NI-780
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S19080HR3

Transistor Type
N-Channel
Frequency
1.93GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
750mA
Voltage - Test
28V
Power - Output
24W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

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RF Device Data
Freescale Semiconductor
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
Dec. 2008
Jan. 2007
Date
• Initial Release of Data Sheet
• Table 4, On Characteristics, corrected V
• Table 4, On Characteristics, tightened V
• Updated PCB information to show more specific material details, Figs. 1 and 17, Test Circuit Schematic,
• Updated Part Numbers in Tables 5 and 6, Component Designations and Values, to latest RoHS compliant
• Updated Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test
p. 4, 10
part numbers, p. 4, 10
Signal, to better represent production test signal, p. 8
PRODUCT DOCUMENTATION
REVISION HISTORY
GS(Q)
DS
to V
Description
max value from 3.8 to 3.5 to match production test value, p. 2
DD
in the RF test condition voltage callout for V
MRF7S19080HR3 MRF7S19080HSR3
GS(Q)
, p. 2
15

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