MRF8S9100HR3 Freescale Semiconductor, MRF8S9100HR3 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/2/262/freescale_semiconductor_sml.jpg)
MRF8S9100HR3
Manufacturer Part Number
MRF8S9100HR3
Description
MOSFET RF N-CH 100W NI-780
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF8S9100HR3.pdf
(14 pages)
Specifications of MRF8S9100HR3
Transistor Type
N-Channel
Frequency
920MHz
Gain
19.3dB
Voltage - Rated
70V
Current Rating
10µA
Current - Test
500mA
Voltage - Test
28V
Power - Output
72W
Package / Case
NI-780
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF8S9100HR3
Manufacturer:
Microsemi
Quantity:
1 400
6
MRF8S9100HR3 MRF8S9100HSR3
6
5
4
3
2
1
0
--50
--55
--60
--65
--70
--75
--80
800
0
V
EDGE Modulation
DD
820 840
V
EDGE Modulation
Figure 8. Spectral Regrowth at 600 kHz
= 28 Vdc, I
DD
10
Figure 6. EVM versus Frequency
= 28 Vdc, I
20
DQ
860
P
P
versus Output Power
out
out
= 700 mA
DQ
30
f, FREQUENCY (MHz)
= 64 W Avg.
, OUTPUT POWER (WATTS)
= 700 mA
14 W Avg.
880
45 W Avg.
40
900
50
--10
--15
920
25
20
15
10
--5
940 MHz
5
0
500
60
940
Figure 10. Broadband Frequency Response
70
600
f = 960 MHz
TYPICAL CHARACTERISTICS
960
80
920 MHz
980
700
90
IRL
1000
f, FREQUENCY (MHz)
100
800
Gain
10
900
8
6
4
2
0
1
--40
--45
--50
--55
--60
--65
--70
V
EDGE Modulation
Figure 9. EVM and Drain Efficiency versus
DD
0
1000
= 28 Vdc, I
V
EDGE Modulation
V
P
I
DD
DQ
Figure 7. Spectral Regrowth at 400 kHz
DD
in
10
= 28 Vdc, I
= 0 dBm
= 500 mA
= 28 Vdc
P
1100
out
20
DQ
, OUTPUT POWER (WATTS) AVG.
= 700 mA
P
DQ
versus Output Power
Output Power
out
30
1200
= 700 mA
, OUTPUT POWER (WATTS)
15
10
5
0
--5
--10
--15
--20
--25
40
10
η
EVM
D
50
940 MHz
Freescale Semiconductor
960 MHz
f = 960 MHz
60
f = 960 MHz
920 MHz
70
RF Device Data
940 MHz
940 MHz
920 MHz
920 MHz
80
100
90
75
60
45
30
0
15
100