MRF7S19080HR5 Freescale Semiconductor, MRF7S19080HR5 Datasheet - Page 12

• Manufacturer Part Number: MRF7S19080HR5
• Description: MOSFET RF N-CH NI-780
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S19080HR5

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 18dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 750mA
• Voltage - Test: 28V
• Power - Output: 24W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF7S19080HR3 MRF7S19080HSR3
12
−100
−120
−130
−110
−30
−40
−50
−60
−70
−80
−90
Center 2.0175 GHz
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
Figure 21. 3 - Carrier TD - SCDMA Spectrum
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
f, FREQUENCY (MHz)
Channel BW
1.28 MHz
1.5 MHz
−60
−60
−30
−35
−40
−45
−50
−55
−30
−45
−40
−45
−50
−55
0.5
0
Figure 19. 3 - Carrier TD - SCDMA ACPR, ALT and
Figure 20. 6 - Carrier TD - SCDMA ACPR, ALT and
6−Carrier TD−SCDMA
V
f = 2017.5 MHz
3−Carrier TD−SCDMA
V
f = 2017.5 MHz
DD
DD
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
= 28 V, I
1
= 28 V, I
Drain Efficiency versus Output Power
Drain Efficiency versus Output Power
1.5
Adj−L
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
TYPICAL CHARACTERISTICS
P
P
2
DQ
out
out
DQ
TD - SCDMA TEST SIGNAL
2.5
Span 15 MHz
, OUTPUT POWER (WATTS) AVG.
, OUTPUT POWER (WATTS) AVG.
= 750 mA
= 750 mA
3
Alt−U
Alt−U
3.5
Adj−U
4
Adj−U
4.5
5
−100
−120
−130
−110
−30
−40
−50
−60
−70
−80
−90
5.5
6
Center 2.0175 GHz
η
D
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
Figure 22. 6 - Carrier TD - SCDMA Spectrum
7
6.5
η
D
Alt−L
Alt−L
8
Adj−L
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
7.5
9
24
20
16
12
8
4
0
24
20
16
12
8
4
0
f, FREQUENCY (MHz)
Channel BW
1.28 MHz
2.5 MHz
Freescale Semiconductor
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
RF Device Data
Span 25 MHz