MRF7S38040HR3 Freescale Semiconductor, MRF7S38040HR3 Datasheet - Page 6

• Manufacturer Part Number: MRF7S38040HR3
• Description: MOSFET RF N-CH 8W 30V NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S38040HR3

• Transistor Type: N-Channel
• Frequency: 3.4GHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 450mA
• Voltage - Test: 30V
• Power - Output: 8W
• Package / Case: NI-400
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 8W
• Power Gain (typ)@vds: 14dB
• Frequency (min): 3.4GHz
• Frequency (max): 3.8GHz
• Package Type: NI-400-240
• Pin Count: 3
• Input Capacitance (typ)@vds: 268@28VpF
• Output Capacitance (typ)@vds: 229@28VpF
• Reverse Capacitance (typ): 0.4@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 15.6%
• Mounting: Screw
• Mode Of Operation: BWA/OFDM/WIBRO/WIMAX
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF7S38040HR3 MRF7S38040HSR3
6
16
15
14
13
12
10
11
9
1
I
562.5 mA
DQ
337.5 mA
450 mA
225 mA
= 675 mA
Figure 5. Two - Tone Power Gain versus
P
V
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
out
DD
, OUTPUT POWER (WATTS) PEP
= 30 Vdc, I
Output Power
Figure 4. WiMAX Broadband Performance @ P
Figure 3. WiMAX Broadband Performance @ P
DQ
10
= 450 mA
15.5
14.5
13.5
12.5
11.5
14.5
13.5
12.5
11.5
12
15
12
15
14
13
14
13
11
3400
3400
ACPR−U
G
V
I
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
V
I
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
DQ
DQ
G
ps
DD
DD
ACPR−U
ps
ACPR −L
3425
3425
= 450 mA, 802.16d, 64 QAM
= 450 mA, 802.16d, 64 QAM
= 30 Vdc, P
= 30 Vdc, P
η
TYPICAL CHARACTERISTICS
D
3450
3450
out
out
η
IRL
D
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
= 14 W (Avg.)
= 8 W (Avg.)
3475
3475
100
IRL
ACPR −L
3500
3500
3
3
/
/
4,
4,
3525
3525
4 Bursts
4 Bursts
−50
−10
−20
−30
−40
3550
3550
1
Figure 6. Third Order Intermodulation Distortion
337.5 mA
675 mA
V
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
DD
I
out
DQ
out
450 mA
3575
3575
= 30 Vdc, I
= 225 mA
= 14 Watts Avg.
= 8 Watts Avg.
3600
3600
P
out
16
14
12
10
22
20
18
16
DQ
−47
−49
−51
−53
−55
−38
−40
−42
−44
−46
, OUTPUT POWER (WATTS) PEP
versus Output Power
= 450 mA
562.5 mA
−12
−16
−20
−24
−28
−12
−16
−20
−24
−28
10
Freescale Semiconductor
RF Device Data
100