MRF7S38040HR5 Freescale Semiconductor, MRF7S38040HR5 Datasheet

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MRF7S38040HR5

Manufacturer Part Number
MRF7S38040HR5
Description
MOSFET RF N-CH 8W 30V NI-400
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S38040HR5

Transistor Type
N-Channel
Frequency
3.4GHz
Gain
14dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
450mA
Voltage - Test
30V
Power - Output
8W
Package / Case
NI-400
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
8W
Power Gain (typ)@vds
14dB
Frequency (min)
3.4GHz
Frequency (max)
3.8GHz
Package Type
NI-400-240
Pin Count
3
Input Capacitance (typ)@vds
268@28VpF
Output Capacitance (typ)@vds
229@28VpF
Reverse Capacitance (typ)
0.4@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
15.6%
Mounting
Screw
Mode Of Operation
BWA/OFDM/WIBRO/WIMAX
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical WiMAX Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 40 Watts CW
• P
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for WiMAX base station applications with frequencies up to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
8 Watts Avg., f = 3400 - 3600 MHz, 802.16d, 64 QAM
Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on
CCDF.
Peak Tuned Output Power
Operation
Case Temperature 96°C, 39 W CW
Case Temperature 75°C, 8 W CW
out
Power Gain — 14 dB
Drain Efficiency — 15.6%
Device Output Signal PAR — 8.4 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
@ 1 dB Compression Point w 40 Watts CW
(1,2)
Characteristic
DD
Rating
= 30 Volts, I
DQ
= 450 mA, P
3
/
4
, 4 bursts, 7 MHz
out
=
Symbol
Symbol
R
V
V
V
T
T
T
θJC
DS
GS
DD
stg
C
J
Document Number: MRF7S38040H
CASE 465J - 02, STYLE 1
CASE 465I - 02, STYLE 1
MRF7S38040HR3 MRF7S38040HSR3
3400 - 3600 MHz, 8 W AVG., 30 V
MRF7S38040HSR3
MRF7S38040HSR3
MRF7S38040HR3
MRF7S38040HR3
NI - 400S - 240
NI - 400 - 240
LATERAL N - CHANNEL
RF POWER MOSFETs
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.78
0.83
150
225
WiMAX
(2,3)
Rev. 0, 8/2007
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF7S38040HR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 30 Volts 450 mA, P ...

Page 2

... Vdc 2 2.7 3.5 Vdc 0.1 0.21 0.3 Vdc — 0.4 — pF — 229 — pF — 268 — Avg 3400 MHz and f = out 15 7.3 8.4 — dB — dBc — (continued) RF Device Data Freescale Semiconductor ...

Page 3

... MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) 1. RCE = 20Log(EVM/100) RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) C Symbol DD Mask Point B at 3.5 MHz Offset Point MHz Offset Point ...

Page 4

... Part Number 2508051107Y0 ATC100B2R7BT500XT ATC100B360BT500XT C1825C103J1RAC ATC100B102BT50XT T491C106K035AT T491C226K035AT EKME630ELL471MK25S MCHT101M1HB - 1017 - RH CRCW12061803FKEA V SUPPLY + + + C8 C9 C10 C11 C12 C13 RF OUTPUT Z15 Z16 Z17 Z18 C7 = 2.55 r Manufacturer Fair - Rite ATC ATC Kemet ATC Kemet Kemet Multicomp Multicomp Vishay RF Device Data Freescale Semiconductor ...

Page 5

... Figure 2. MRF7S38040HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C9 C10 C8 C2 MRF7S38040HR3 MRF7S38040HSR3 C12 C13 C11 C7 MRF7S38040 Rev ...

Page 6

... Watts Avg −38 −12 −40 −16 −42 −20 −44 −24 −46 −28 3600 = 14 Watts Avg Vdc 450 225 mA 562 OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 100 ...

Page 7

... OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS − Two −Tone Measurements −20 (f1 + f2)/2 = Center Frequency of 3500 MHz IM3 −L −30 IM3 −U −40 −50 IM7 −U IM7 −L − ...

Page 8

... Input Signal −40 −50 −60 −70 −80 − Point D −100 −110 −9 −7.2 Figure 14. WiMAX Spectrum Mask Specifications 230 250 7 MHz Channel BW System Type G Point B Point B Point C Point C Point D −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 9 ...

Page 9

... MHz Figure 15. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 25 Ω source Z load f = 3400 MHz Vdc 450 mA Avg out source load MHz W W 3400 19.57 - j9.98 10.66 - j6.30 3425 20.02 - j9.03 10.41 - j6.55 3450 20.33 - j8.18 9.85 - j6.83 3475 20 ...

Page 10

... MRF7S38040HR3 MRF7S38040HSR3 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF7S38040HR3 MRF7S38040HSR3 11 ...

Page 12

... MRF7S38040HR3 MRF7S38040HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF7S38040HR3 MRF7S38040HSR3 13 ...

Page 14

... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Aug. 2007 • Initial Release of Data Sheet MRF7S38040HR3 MRF7S38040HSR3 14 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 15

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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