MRF6S23140HR3 Freescale Semiconductor, MRF6S23140HR3 Datasheet - Page 9

• Manufacturer Part Number: MRF6S23140HR3
• Description: MOSFET RF N-CHAN 28W 28W NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S23140HR3

• Transistor Type: N-Channel
• Frequency: 2.39GHz
• Gain: 15.2dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-880
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 28W
• Power Gain (typ)@vds: 15.2dB
• Frequency (min): 2.3GHz
• Frequency (max): 2.4GHz
• Package Type: NI-880
• Pin Count: 3
• Reverse Capacitance (typ): 2@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
f = 2300 MHz
f = 2400 MHz
Figure 15. Series Equivalent Source and Load Impedance
Z
o
= 25
Z
load
Input
Matching
Network
Z
Z
source
load
2300
2310
2320
2330
2340
2350
2360
2370
2380
2390
2400
MHz
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
Z
gate to ground.
from drain to ground.
source
12.92 + j6.65
13.06 + j6.73
13.21 + j6.80
13.37 + j6.87
13.53 + j6.94
13.70 + j7.01
13.88 + j7.08
14.06 + j7.14
14.25 + j7.21
14.45 + j7.27
14.66 + j7.33
f = 2300 MHz
Z
DQ
Device
Under
Test
source
W
= 1300 mA, P
Z
Z
source
load
out
= 28 W Avg.
1.05 - j2.88
1.04 - j2.82
1.03 - j2.76
1.01 - j2.70
1.00 - j2.64
0.99 - j2.58
0.97 - j2.52
0.96 - j2.46
0.95 - j2.40
0.94 - j2.34
0.93 - j2.28
f = 2400 MHz
Z
load
W
Output
Matching
Network
MRF6S23140HR3 MRF6S23140HSR3
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