MRF7S16150HSR3 Freescale Semiconductor, MRF7S16150HSR3 Datasheet
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MRF7S16150HSR3
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MRF7S16150HSR3 Summary of contents
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... MHz AVG CASE 465 - 06, STYLE 1 CASE 465A - 06, STYLE 1 Symbol V DSS stg Symbol R θJC MRF7S16150HR3 MRF7S16150HSR3 Rev. 1, 12/2008 MRF7S16150HR3 MRF7S16150HSR3 WiMAX LATERAL N - CHANNEL RF POWER MOSFETs NI - 780 MRF7S16150HR3 NI - 780S MRF7S16150HSR3 Value Unit - 0.5, +65 Vdc - 6.0, +10 Vdc 32, +0 Vdc - 65 to +150 °C 150 ° ...
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... MHz Channel Bandwidth @ ±5.25 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S16150HR3 MRF7S16150HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...
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... MHz Bandwidth — 20 — — 0.292 — — 82.71 — — 7.19 — — 22.38 — — 0.01387 — — 0.409 — MRF7S16150HR3 MRF7S16150HSR3 Unit dBc dB % rms MHz dB ° ns ° dB/°C dBm/°C 3 ...
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... C2, C8 0.01 μ Chip Capacitors C3 Chip Capacitors C4, C10 47 pF Chip Capacitors C6 μ Tantalum Capacitors C9 220 μ Electrolytic Capacitor R1 1 KΩ, 1/4 W Chip Resistor R2 10 Ω, 1/4 W Chip Resistor MRF7S16150HR3 MRF7S16150HSR3 DUT Z7 0.619″ x 1.330″ Microstrip Z8 0.284″ x 0.190″ Microstrip Z9 0.220″ ...
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... Figure 2. MRF7S16150HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C10 MRF7S16150HR3 MRF7S16150HSR3 5 ...
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... Vdc 1500 1625 MHz 1635 MHz Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S16150HR3 MRF7S16150HSR3 6 TYPICAL CHARACTERISTICS η Vdc (Avg.), I = 1500 mA, DD out 802.16d, 64 QAM 4 Bursts, 7 MHz Channel 4, Bandwidth, Input Signal PAR = 9 ...
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... TWO−TONE SPACING (MHz) versus Tone Spacing −15 −30_C −20 25_C −25 −30 −30_C −35 −40 −45 − −30_C C −55 85_C −60 −65 25_C −70 −75 100 300 I = 1500 1630 MHz 100 200 P , OUTPUT POWER (WATTS) CW out MRF7S16150HR3 MRF7S16150HSR3 100 32 V 300 7 ...
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... QAM , 4 Bursts, 7 MHz 4 Channel Bandwidth, Input Signal 0.001 PAR = 9 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. OFDM 802.16d Test Signal MRF7S16150HR3 MRF7S16150HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 25.4%. DD out ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF7S16150HR3 MRF7S16150HSR3 9 ...
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... (INSULATOR) bbb M N (LID) ccc (FLANGE (FLANGE (LID (FLANGE) D bbb (LID) ccc M M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S16150HR3 MRF7S16150HSR3 10 PACKAGE DIMENSIONS Q bbb (LID ccc (INSULATOR) aaa SEATING PLANE CASE 465 - 06 ISSUE 780 MRF7S16150HR3 Z R (LID ccc (INSULATOR) aaa ...
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... Updated Fig. 13, OFDM 802.16d Test Signal, to show input signal only • Updated Fig. 14, WiMAX Spectrum Mask Specifications, to more accurately represent the WiMAX spectrum Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description max value from 3.8 to 3.5 to match production test value GS(Q) MRF7S16150HR3 MRF7S16150HSR3 11 ...
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... P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S16150HR3 MRF7S16150HSR3 Document Number: MRF7S16150H Rev. 1, 12/2008 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...