MRF7S19170HSR3 Freescale Semiconductor, MRF7S19170HSR3 Datasheet - Page 10

• Manufacturer Part Number: MRF7S19170HSR3
• Description: IC MOSFET RF N-CHAN NI-880S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S19170HSR3

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 17.2dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W
• Power Gain (typ)@vds: 17.2dB
• Frequency (min): 1.93GHz
• Frequency (max): 1.99GHz
• Package Type: NI-880S
• Pin Count: 3
• Output Capacitance (typ)@vds: 703@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF7S19170HR3 MRF7S19170HSR3
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NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 53.25 dBm
(211 W)
P3dB = 53.97 dBm (249 W)
33
P3dB
Figure 17. Pulsed CW Output Power
34
Test Impedances per Compression Level
35
versus Input Power
V
12 μsec(on), 10% Duty Cycle, f = 1960 MHz
DD
P
2.34 - j9.24
P6dB = 54.33 dBm (271 W)
36
in
, INPUT POWER (dBm)
Z
= 28 Vdc, I
source
Ω
37
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
38
DQ
= 1400 m, Pulsed CW
39
40
0.79 - j2.94
Z
41
load
Ω
42
Ideal
Actual
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58
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56
55
54
53
52
33
NOTE: Measured in a Peak Tuned Load Pull Fixture
P1dB = 54.14 dBm
(259 W)
34
P3dB
Figure 18. Pulsed CW Output Power
P3dB = 54.9 dBm (310 W)
35
Test Impedances per Compression Level
36
versus Input Power
P6dB = 55.27 dBm (336 W)
V
12 μsec(on), 10% Duty Cycle, f = 1960 MHz
P
2.34 - j9.24
DD
37
in
, INPUT POWER (dBm)
Z
source
= 32 Vdc, I
Ω
38
39
DQ
Freescale Semiconductor
= 1400 mA, Pulsed CW
40
0.79 - j2.94
41
Z
load
42
RF Device Data
Ω
43
Ideal
Actual
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