MRF6S19200HSR3 Freescale Semiconductor, MRF6S19200HSR3 Datasheet
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MRF6S19200HSR3
Specifications of MRF6S19200HSR3
Related parts for MRF6S19200HSR3
MRF6S19200HSR3 Summary of contents
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... CASE 465 - 06, STYLE 1 MRF6S19200HR3 CASE 465A - 06, STYLE 1 MRF6S19200HSR3 Symbol V DSS stg Symbol R θJC MRF6S19200HR3 MRF6S19200HSR3 Rev. 0, 3/2008 SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs NI - 780 NI - 780S Value Unit - 0.5, +66 Vdc - 6.0, +10 Vdc 32, +0 Vdc - 65 to +150 °C 150 °C 225 °C 130 W 0 ...
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... CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF6S19200HR3 MRF6S19200HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...
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... W CW, ΔΦ out ΔG Min Typ Max = 1600 mA, 1930 - 1990 MHz Bandwidth — 20 — — 50 — — 0.6 — — 1.94 — — 2.44 — — 59.4 — — 0.04 — MRF6S19200HR3 MRF6S19200HSR3 Unit MHz MHz dB ° ns ° dB/°C 3 ...
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... V Capacitors C3, C13 33 pF Chip Capacitors C4, C5 Chip Capacitors C7 μ Capacitors C11, C12 22 μ Tantalum Capacitors C14, C15 22 μ Electrolytic Capacitors R1 1000 Ω, 1/4 W Chip Resistor R2 10 Ω, 1/4 W Chip Resistor MRF6S19200HR3 MRF6S19200HSR3 Z10 Z11 DUT C6 Z10 0.547″ x 1.203″ Microstrip Z11 0.119″ ...
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... Figure 2. MRF6S19200HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C5 C4 C10 C6 C7 C11 C9 C14 C13 C15 C12 C8 MRF6S19200H/HS Rev. 2 MRF6S19200HR3 MRF6S19200HSR3 5 ...
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... Vdc 1955 MHz 1965 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S19200HR3 MRF6S19200HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 1600 mA, Single−Carrier W−CDMA DQ 3.84 MHz Channel Bandwidth, Input Signal PAR = 7 ...
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... Figure 11. Power Gain versus Output Power = 28 Vdc 130 W (PEP 1600 mA out DQ IM3−L IM3−U IM5−U IM7−L IM5−L IM7−U 10 TWO−TONE SPACING (MHz) versus Tone Spacing 1600 1960 MHz 100 P , OUTPUT POWER (WATTS) CW out MRF6S19200HR3 MRF6S19200HSR3 100 120 140 7 ...
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... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF6S19200HR3 MRF6S19200HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load Z source f = 1880 MHz load W Output Matching Network MRF6S19200HR3 MRF6S19200HSR3 9 ...
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... (FLANGE) D bbb (LID (FLANGE (FLANGE (LID (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF6S19200HR3 MRF6S19200HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc aaa ccc SEATING T PLANE CASE 465 - 06 ISSUE 780 MRF6S19200HR3 ccc aaa CASE 465A - 06 ISSUE 780S MRF6S19200HSR3 NOTES: 1 ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Mar. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF6S19200HR3 MRF6S19200HSR3 11 ...
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... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S19200HR3 MRF6S19200HSR3 Document Number: MRF6S19200H Rev. 0, 3/2008 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...