MRF6V12500HR3 Freescale Semiconductor, MRF6V12500HR3 Datasheet - Page 6

• Manufacturer Part Number: MRF6V12500HR3
• Description: FET RF N-CH 1.03GHZ 100V NI-780H
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V12500HR3

• Transistor Type: N-Channel
• Frequency: 1.03GHz
• Gain: 19.7dB
• Voltage - Rated: 100V
• Current - Test: 200mA
• Voltage - Test: 50V
• Power - Output: 500W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Power Gain (typ)@vds: 19.7/18.5dB
• Frequency (min): 960MHz
• Frequency (max): 1.215GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 1391@50VpF
• Output Capacitance (typ)@vds: 697@50VpF
• Reverse Capacitance (typ): 0.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 62%
• Mounting: Screw
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

6
MRF6V12500HR3 MRF6V12500HSR3
700
600
500
400
300
200
100
0
0
Figure 9. Pulsed Output Power versus
2
P
in
, INPUT POWER (dBm) PULSED
4
V
Pulse Width = 128 μsec, Duty Cycle = 10%
Input Power
DD
= 50 Vdc, I
6
55_C
10
10
10
10
10
DQ
9
8
7
6
5
90
90
= 200 mA, f = 1030 MHz
T
This above graph displays calculated MTTF in hours when the device
is operated at V
Duty Cycle = 10%, and η
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
C
8
= --30_C
25_C
110
110
TYPICAL CHARACTERISTICS
10
130
130
T
DD
J
85_C
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
150
150
12
D
= 62%.
out
170
170
= 500 W Peak, Pulse Width = 128 μsec,
22
21
20
19
18
17
16
15
14
Figure 10. Pulsed Power Gain and Drain Efficiency
30
η
25_C
85_C
190
190
D
T
C
= --30_C
210
210
55_C
P
out
, OUTPUT POWER (WATTS) PULSED
versus Output Power
230
230
100
V
Pulse Width = 128 μsec, Duty Cycle = 10%
DD
= 50 Vdc, I
250
250
G
ps
DQ
= 200 mA, f = 1030 MHz
Freescale Semiconductor
RF Device Data
1000
80
70
60
50
40
30
20
10
0