MRF6V12500HSR5 Freescale Semiconductor, MRF6V12500HSR5 Datasheet - Page 12

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MRF6V12500HSR5

Manufacturer Part Number
MRF6V12500HSR5
Description
FET RF N-CH 960MHZ 70V NI-1230H
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V12500HSR5

Transistor Type
N-Channel
Frequency
1.03GHz
Gain
19.7dB
Voltage - Rated
100V
Current - Test
200mA
Voltage - Test
50V
Power - Output
500W
Package / Case
NI-780S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
12
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
MRF6V12500HR3 MRF6V12500HSR3
Revision
Refer to the following documents, tools and software to aid your design process.
The following table summarizes revisions to this document.
0
1
2
Sept. 2009
Sept. 2010
Apr. 2010
Date
• Initial Release of Data Sheet
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Added RF High Power Model availability to Product Software, p. 9
• Maximum Ratings table: corrected V
• Added 960--1215 MHz Broadband application as follows:
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
-- Typical Performance, p. 1, 2
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8
-- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9
-- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9
-- Fig. 16, Series Equivalent Source and Load Impedance, p. 10
PRODUCT DOCUMENTATION AND SOFTWARE
REVISION HISTORY
DSS
from --0.5, +100 to --0.5, +110 Vdc, p. 2
Description
Freescale Semiconductor
RF Device Data

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