BF 2030 E6814 Infineon Technologies, BF 2030 E6814 Datasheet - Page 6

• Manufacturer Part Number: BF 2030 E6814
• Description: MOSFET N-CH 8V 40MA SOT-143
• Manufacturer: Infineon Technologies

Specifications of BF 2030 E6814

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Rated: 8V
• Current Rating: 40mA
• Noise Figure: 1.5dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.04 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BF2030E6814XT; SP000012219

Drain current I
V
R
G2S
G1
mA
= Parameter in k
28
24
22
20
18
16
14
12
10
= 4V
8
6
4
2
0
0
1
2
D
= (V
3
GG
4
)
5
6
V
V
70
80
100
120
GG
=V
8
DS
6
Crossmodulation V
V
DS
dBµV
120
110
105
100
= 5 V
95
90
85
80
0
10
20
unw
= (AGC)
30
40
BF2030...
2007-04-20
dB
AGC
55