BG 5120K E6327 Infineon Technologies, BG 5120K E6327 Datasheet - Page 8

no-image

BG 5120K E6327

Manufacturer Part Number
BG 5120K E6327
Description
MOSFET N-CH DUAL 8V 20MA SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BG 5120K E6327

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
23dB
Voltage - Rated
8V
Current Rating
20mA
Noise Figure
1.1dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.02 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000292148
BG5120K
Crossmodulation test circuit
V
V
AGC
DS
4n7
R1
10kΩ
2.2 uH
4n7
4n7
RL
50Ω
4n7
R
GEN
50Ω
50 Ω
RG1
V
GG
Semibiased
2009-10-01
8

Related parts for BG 5120K E6327