BG 3130 E6327 Infineon Technologies, BG 3130 E6327 Datasheet - Page 4

• Manufacturer Part Number: BG 3130 E6327
• Description: MOSFET N-CH DUAL 8V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3130 E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BG3130E6327XT; SP000013182

Total power dissipation P
amp. A = amp. B
Output characteristics I
amp. A = amp. B
mW
mA
300
200
150
100
50
22
18
16
14
12
10
0
8
6
4
2
0
0
0
20
2
40
4
60
6
80
D
8
= ƒ(V
tot
100
= ƒ(T
10
DS
120 °C
S
)
V
)
0.8V
1.3V
1.2V
1.1V
T
V
1V
S
DS
150
14
4
Drain current I
V
amp. A = amp. B
Gate 1 current I
V
amp. A = amp. B
G2S
DS
mA
225
µA
175
150
125
100
= 5V, V
30
20
15
10
75
50
25
= 4V
5
0
0
0
0
10
0.4
G2S
20
0.8
D
G1
= Parameter
30
= ƒ(I
1.2
= ƒ(V
40
G1
1.6
50
)
G1S
60
2
)
70
BG3130...
2005-11-03
2.4
80 µA
4V
V
I
I
G1
G1
3.5V
3V
2.5V
2V
100
3.2