BF 999 E6327 Infineon Technologies, BF 999 E6327 Datasheet - Page 3

• Manufacturer Part Number: BF 999 E6327
• Description: MOSFET N-CH RF 20V 30MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BF 999 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: N-Channel
• Frequency: 45MHz
• Gain: 27dB
• Voltage - Rated: 20V
• Current Rating: 30mA
• Noise Figure: 2.1dB
• Current - Test: 10mA
• Voltage - Test: 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6.5 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Channel Type: N
• Drain Source Voltage (max): 20V
• Power Gain (typ)@vds: 27@10VdB
• Noise Figure (max): 2.1(Typ)dB
• Frequency (max): 300MHz
• Package Type: SOT-23
• Pin Count: 3
• Forward Transconductance (typ): 0.02S
• Input Capacitance (typ)@vds: 2.5@10VpF
• Output Capacitance (typ)@vds: 0.9@10VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF999E6327XT; SP000010985

Total power dissipation P
Gate transconductance g
mW
mS
250
150
100
50
30
20
15
10
0
5
0
-1
0
15
-0.5
30
45
60
0
75
fs
0.5
90 105 120 °C
tot
=
= (T
(V
V
GS
S
)
T
V
)
S
GS
150
1.5
3
Output characteristics I
Drain current I
mA
mA
18
14
12
10
30
20
15
10
8
6
4
2
0
5
0
-1
0
5
D
= (V
GS
10
V
)
D
=
0.1V
0.3V
0V
-0.1V
-0.2V
-0.3V
-0.4V
0.2V
(V
2007-04-20
V
DS
BF999
)
V
V
DS
GS
20
1