2SK3391JXTL Renesas Electronics America, 2SK3391JXTL Datasheet - Page 4

• Manufacturer Part Number: 2SK3391JXTL
• Description: MOSFET N-CH 17V 300MA UPAK
• Manufacturer: Renesas Electronics America

Specifications of 2SK3391JXTL

• Transistor Type: N-Channel
• Frequency: 836MHz
• Voltage - Rated: 17V
• Current Rating: 300mA
• Current - Test: 150mA
• Voltage - Test: 13.7V
• Power - Output: 1.6W
• Package / Case: UPAK
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gain: -
• Noise Figure: -
• Other names: 2SK3391JXTB; 2SK3391JXTB

2SK3391
Electrical Characteristics
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Output capacitance
Output Power
Added Efficiency
Main Characteristics
REJ03G0209-0300 Rev.3.00 Nov 08, 2007
Page 2 of 9
0.8
0.6
0.4
0.2
0.0
Item
0
8
6
4
2
2
Gate to Source Voltage V
Typical Transfer Characteristics
Case Temperature Tc (°C)
Maximum Channel Power
Tc = 75°C
3
50
Dissipation Curve
- 25°C
25°C
4
100
Symbol
V
Coss
Pout
Ciss
I
I
GS(off)
5
GSS
DSS
add
V
Pulse Test
DS
150
= 13.7 V
GS
6
Min.
2.3
1.6
58
(V)
—
—
—
—
200
7
Typ
3.5
10
—
—
—
—
—
Max.
3.1
10
±5
—
—
—
—
0.003
0.001
0.03
0.01
1.5
0.5
0.3
0.1
0.001 0.003
1
1
0
Drain to Source Voltage V
Unit
Forward Transfer Admittance vs.
10 V
pF
pF
W
%
8 V
V
Typical Output Characteristics
A
A
2
Drain Current I
Tc = - 25°C
V
V
V
V
V
V
f = 836 MHz, Pin = 25.1 mW
0.01
DS
GS
DS
GS
DS
DS
Drain Current
= 13.7 V, V
= ±10 V, V
= 13.7 V, I
= 5 V, V
= 13.7 V, V
= 13.7 V, I
4
75°C
0.03
Test Conditions
6
V
Pulse Test
DS
0.1
DS
D
Pulse Test
D
DQ
DS
= 0, f = 1 MHz
GS
GS
V
= 1 mA
= 13.7 V
25°C
(A)
= 150 mA
GS
= 0
= 0
= 0, f = 1 MHz
8
DS
0.3
= 4 V
7 V
6 V
5 V
(V)
(Ta = 25°C)
10
1