MRFG35002N6R5 Freescale Semiconductor, MRFG35002N6R5 Datasheet - Page 5
MRFG35002N6R5
Manufacturer Part Number
MRFG35002N6R5
Description
TRANSISTOR RF 1.5W 6V POWER FET
Manufacturer
Freescale Semiconductor
Datasheet
1.MRFG35002N6R5.pdf
(12 pages)
Specifications of MRFG35002N6R5
Transistor Type
pHEMT FET
Frequency
3.55GHz
Gain
10dB
Voltage - Rated
8V
Current Rating
1.7A
Current - Test
65mA
Voltage - Test
6V
Power - Output
1.5W
Package / Case
PLD-1.5
Configuration
Single Dual Source
Gate-source Voltage (max)
5V
Drain-source Volt (max)
8V
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
MRFG35002N6R5TR
RF Device Data
Freescale Semiconductor
NOTE: All data is referenced to package lead interface. Γ
All data is generated from load pull, not from the test circuit shown.
−20
−30
−40
−50
−60
14
12
10
8
6
4
0
0
Figure 4. Single - Carrier W - CDMA ACPR and
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
V
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
DS
S
DS
S
Input Return Loss versus Output Power
= 0.813é−115.4_, Γ
= 0.813é−115.4_, Γ
= 6 Vdc, I
= 6 Vdc, I
Figure 3. Transducer Gain and Drain
TYPICAL CHARACTERISTICS
Efficiency versus Output Power
5
6
G
η
DQ
DQ
T
D
ACPR
IRL
P
P
= 75 mA, f = 3550 MHz
= 75 mA, f = 3550 MHz
out
out
10
, OUTPUT POWER (dBm)
, OUTPUT POWER (dBm)
L
12
L
= 0.748é−147.8_
= 0.748é−147.8_
15
S
and Γ
18
20
L
are the impedances presented to the DUT.
24
25
30
30
50
40
30
20
10
0
0
−5
−10
−15
−20
MRFG35002N6T1
5