MRF6S21050LR5 Freescale Semiconductor, MRF6S21050LR5 Datasheet - Page 7

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MRF6S21050LR5

Manufacturer Part Number
MRF6S21050LR5
Description
MOSFET RF N-CH 28V 11.5W NI-400
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S21050LR5

Transistor Type
N-Channel
Frequency
2.16GHz
Gain
16dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
450mA
Voltage - Test
28V
Power - Output
11.5W
Package / Case
NI-400
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
RF Device Data
Freescale Semiconductor
0.0001
0.001
0.01
100
0.1
10
1
64 DPCH, 67% Clipping, Single - Carrier Test Signal
0
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
2
PEAK−TO−AVERAGE (dB)
4
10
10
10
10
Figure 12. MTTF Factor versus Junction Temperature
8
7
6
5
90
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
6
110
TYPICAL CHARACTERISTICS
W - CDMA TEST SIGNAL
130
T
8
J
DD
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
150
10
out
170
= 11.5 W Avg., and η
190
+20
+30
−10
−20
−30
−40
−50
−60
−70
−80
0
−25
210
−IM3 in
3.84 MHz BW
−20
Figure 14. 2-Carrier W-CDMA Spectrum
D
= 27.7%.
−15
230
−10
MRF6S21050LR3 MRF6S21050LSR3
−ACPR in
3.84 MHz BW
250
f, FREQUENCY (MHz)
−5
3.84 MHz
Channel BW
0
+ACPR in
3.84 MHz BW
5
10
+IM3 in
3.84 MHz BW
15
20
25
7

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