MRF7S21170HS Freescale Semiconductor, MRF7S21170HS Datasheet - Page 15

• Manufacturer Part Number: MRF7S21170HS
• Description: IC MOSFET RF N-CHAN NI-880S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S21170HS

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
Revision
Refer to the following documents and software to aid your design process.
The following table summarizes revisions to this document.
0
1
2
3
4
Sept. 2006
June 2006
Aug. 2006
May 2006
May 2007
Date
• Initial Release of Data Sheet
• Added Class C to description of parts, pg. 1
• Changeded “≥” to “--” in the Device Output Signal Par bullet, pg. 1
• Changed typ value from ±9 to 18 in Part--to--Part Phase Variation characteristic description in Table 4, Typical
• Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7
• Added Greater Negative Source bullet to Features section, p. 1
• Corrected Fig. 14, Single--Carrier W--CDMA Spectrum, to 3.84 MHz, p. 7
• Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1
• Added “Insertion” to Part--to--Part Phase Variation characteristic description in Table 4, Typical Performances,
• Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical
• Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value
• Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations
• Added Figure 10, Digital Predistortion Correction, p. 6
• Corrected Fig. 15, Single--Carrier W--CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7
• Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9
• Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9
• Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard, p. 1
• Added “Optimized for Doherty Applications” bullet to Features section, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for V
• Updated verbiage in Typical Performances table, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers
• Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps
• Fig. 14, CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single--Carrier Test Signal, updated
Performances, p. 2
p. 2
Performances, p. 2
from “0.770” to “0.077”, corrected Z11 value from “0.076” to “0.760”, Fig. 1, Test Circuit Schematic, p. 3
and Values, p. 3
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
and added Fixture Gate Quiescent Voltage, V
and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4
range, p. 7
operating characteristics and location of MTTF calculator for device, p. 8
to include output power level at functional test, p. 8
PRODUCT DOCUMENTATION AND SOFTWARE
REVISION HISTORY
GG(Q)
Description
to On Characteristics table, p. 2
MRF7S21170HR3 MRF7S21170HSR3
2
and listed
(continued)
GS(Q)
,
15