MRF8P20160HR3 Freescale Semiconductor, MRF8P20160HR3 Datasheet - Page 2

• Manufacturer Part Number: MRF8P20160HR3
• Description: DISCRETE RF FET
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20160HR3

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.92GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 37W
• Package / Case: NI-780H-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

2
MRF8P20160HR3 MRF8P20160HSR3
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
f = 1920 MHz, Single--Carrier W--CDMA
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance
P
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
out
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Each side of device measured separately.
4. Part internally matched both on input and output.
5. Measurement made with device in a Symmetrical Doherty configuration.
Case Temperature 81°C, 37 W CW, 28 Vdc, I
(V
(V
(V
(V
(V
(V
= 37 W Avg., f = 1920 MHz, Single--Carrier W--CDMA
calculators by product.
Select Documentation/Application Notes -- AN1955.
DS
DS
GS
DS
DD
GS
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(4,5)
DS
D
DA
D
(3)
(3)
GS
GS
= 116 μAdc)
= 1.5 Adc)
(In Freescale Doherty Test Fixture, 50 ohm system) V
= 0 Vdc)
= 550 mAdc, Measured in Functional Test)
= 0 Vdc)
= 0 Vdc)
Characteristic
Frequency
1880 MHz
1900 MHz
1920 MHz
Test Methodology
(5)
(In Freescale Doherty Test Fixture, 50 ohm system) V
Characteristic
, IQ Magnitude Clipping
(T
A
= 25°C unless otherwise noted)
DQA
= 550 mA, V
, IQ Magnitude Clipping
, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
GSB
= 1.3 Vdc, 1900 MHz
DD
Symbol
V
V
V
= 28 Vdc, I
ACPR
I
I
I
PAR
DS(on)
GS(th)
GS(Q)
G
DSS
DSS
GSS
η
G
(dB)
16.5
16.6
16.5
ps
D
ps
, Input Signal PAR = 9.9 dB @ 0.01% Probability on
DQA
DD
15.5
43.5
Min
1.2
1.9
0.1
6.4
—
—
—
—
= 28 Vdc, I
= 550 mA, V
44.8
45.3
45.8
(%)
η
Symbol
D
R
θJC
DQA
--30.6
0.27
16.5
45.8
Typ
GSB
1.8
2.7
6.9
—
—
—
IV (Minimum)
A (Minimum)
2 (Minimum)
Output PAR
= 550 mA, V
= 1.6 Vdc, P
Class
Freescale Semiconductor
Value
(dB)
7.0
6.9
6.9
0.75
--28.5
(1,2)
Max
18.5
2.7
3.4
0.5
10
—
—
1
1
GSB
RF Device Data
out
= 1.6 Vdc,
= 37 W Avg.,
(continued)
ACPR
(dBc)
--29.8
--30.1
--30.6
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
%