BFG410W,115 NXP Semiconductors, BFG410W,115 Datasheet - Page 2

• Manufacturer Part Number: BFG410W,115
• Description: TRANS NPN 4.5V 22GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG410W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 22GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 21dB
• Power - Max: 54mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 10mA, 2V
• Current - Collector (ic) (max): 12mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 10mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 22000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.012 A
• Power Dissipation: 54 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1980-2; 934047460115; BFG410W T/R

NXP Semiconductors
FEATURES
 Very high power gain
 Low noise figure
 High transition frequency
 Emitter is thermal lead
 Low feedback capacitance.
APPLICATIONS
 RF front end
 Wideband applications, e.g. analog and digital cellular
 Radar detectors
 Pagers
 Satellite television tuners (SATV)
 High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
QUICK REFERENCE DATA
1998 Mar 11
V
V
I
P
h
C
f
G
F
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
C
T
FE
telephones, cordless telephones (PHS, DECT, etc.)
CBO
CEO
tot
NPN 22 GHz wideband transistor
re
max
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
PARAMETER
open emitter
open base
T
I
I
I
I
I
C
C
C
C
C
s
= 10 mA; V
= 0; V
= 10 mA; V
= 10 mA; V
= 1 mA; V
 110 C
CB
= 2 V; f = 1 MHz
CE
CE
CE
CE
CAUTION
= 2 V; f = 2 GHz; 
CONDITIONS
= 2 V; T
= 2 V; f = 2 GHz; T
= 2 V; f = 2 GHz; T
2
PINNING
handbook, halfpage
j
Marking code: P4.
= 25 C
PIN
1
2
3
4
Fig.1 Simplified outline SOT343R.
S
amb
amb
= 
= 25 C 
= 25 C 
opt
3
2
Top view
emitter
base
emitter
collector




50


MIN.
MSB842
DESCRIPTION
4
1
Product specification


10

80
45
22
21
1.2
TYP.
BFG410W
10
4.5
12
54
120




MAX.
V
V
mA
mW
fF
GHz
dB
dB
UNIT