BFR92AW,115 NXP Semiconductors, BFR92AW,115 Datasheet - Page 2
![TRANS NPN 15V 5GHZ SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BFR92AW,115
Manufacturer Part Number
BFR92AW,115
Description
TRANS NPN 15V 5GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFR92AW115.pdf
(13 pages)
Specifications of BFR92AW,115
Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
65 @ 15mA @ 10V
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.025 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
20V
Emitter-base Voltage
2V
Collector Current (dc) (max)
25mA
Dc Current Gain (min)
65
Frequency (max)
5GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1989-2
934022940115
BFR92AW T/R
934022940115
BFR92AW T/R
NXP Semiconductors
FEATURES
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
QUICK REFERENCE DATA
Note
1. T
V
V
I
P
h
C
f
G
F
T
SYMBOL
C
T
FE
j
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
CBO
CEO
tot
re
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
current gain
feedback capacitance
transition frequency
maximum unilateral power
gain
noise figure
junction temperature
PARAMETER
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR92AW uses the same crystal
as the SOT23 version, BFR92A.
PINNING
open emitter
open base
up to T
I
I
T
I
I
T
I
T
I
C
C
C
C
C
C
amb
amb
amb
s
PIN
= 15 mA; V
= 0; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
=
1
2
3
= 25 C
= 25 C
= 25 C
opt
s
Rev. 03 - 12 March 2008
= 93 C; note 1
CE
base
emitter
collector
= 10 V; f = 1 MHz;
CONDITIONS
CE
CE
CE
CE
CE
DESCRIPTION
= 10 V; f = 1 GHz;
= 10 V
= 10 V; f = 500 MHz
= 10 V; f = 1 GHz;
= 10 V; f = 2 GHz;
handbook, 2 columns
65
3.5
MIN.
Marking code: P2.
Top view
90
0.35
5
14
8
2
Fig.1 SOT323
TYP.
Product specification
1
BFR92AW
20
15
25
300
135
150
MAX.
3
MBC870
2 of 13
2
V
V
mA
mW
pF
GHz
dB
dB
dB
C
UNIT