BFR106,215 NXP Semiconductors, BFR106,215 Datasheet - Page 6

• Manufacturer Part Number: BFR106,215
• Description: TRANS NPN 15V 5GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR106,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 3.5dB @ 800MHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 50mA, 9V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 50mA @ 9V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1987-2; 933806990215; BFR106 T/R

NXP Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistor
I
I
Z
C
C
o
= 30 mA; V
= 30 mA; V
= 50 .
CE
CE
= 6 V; T
= 6 V; T
amb
amb
= 25 C.
= 25 C.
+ j
– j
180°
Fig.8 Common emitter reverse transmission coefficient (S
Fig.9 Common emitter output reflection coefficient (S
0
0.2
0.2
150°
0.5
150°
0.4
0.5
0.5
0.2
0.3
120°
120°
0.2
0.5
800 MHz
0.1
200
200
500
800
1200
90°
90°
1
6
1
1
40 MHz
100
100
500
2000 MHz
1000
1500
2
40 MHz
60°
60°
2
2
5
10
MEA401
MEA402
30°
30°
5
5
22
10
10
∞
).
0°
12
+ ϕ
− ϕ
).
Product specification
BFR106