BFS505,115 NXP Semiconductors, BFS505,115 Datasheet - Page 3

• Manufacturer Part Number: BFS505,115
• Description: TRANS NPN 15V 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS505,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1991-2; 934021370115; BFS505 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. T
September 1995
V
V
V
I
P
T
T
R
C
SYMBOL
stg
j
CBO
CES
EBO
tot
NPN 9 GHz wideband transistor
th j-s
SYMBOL
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to
soldering point
PARAMETER
PARAMETER
open emitter
R
open collector
up to T
BE
= 0
up to T
3
s
= 147 C; note 1
CONDITIONS
s
CONDITIONS
= 147 C; note 1
THERMAL RESISTANCE





65

MIN.
Product specification
190 K/W
20
15
2.5
18
150
+150
175
MAX.
BFS505
V
V
V
mA
mW
C
C
UNIT