BFS520,115 NXP Semiconductors, BFS520,115 Datasheet - Page 4
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BFS520,115
Manufacturer Part Number
BFS520,115
Description
TRANS NPN 70MA 15V 9GHZ SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BFS520115.pdf
(13 pages)
Specifications of BFS520,115
Package / Case
SC-70-3, SOT-323-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Current Gain Hfe Max
60 @ 20mA @ 6V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
9000 MHz (Typ)
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.07 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1654-2
934021420115
BFS520 T/R
934021420115
BFS520 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFS520,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
C re
(pF)
I
Fig.4
C
(mW)
P
= 0; f = 1 MHz.
tot
400
300
200
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.2 Power derating curve.
2
50
4
100
6
150
8
V
T
CB
MRC030 - 1
s
MRC021
(
o
C)
(V)
200
10
4
handbook, halfpage
handbook, halfpage
V
Fig.3
(GHz)
f = 1 GHz; T
Fig.5
CE
h FE
f T
200
150
100
= 6 V; T
50
12
10
10
8
6
4
2
0
0
1
−2
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
amb
j
= 25 C.
= 25 C.
10
−1
10
1
V
CE
Product specification
I C (mA)
10
= 8 V
3 V
I C (mA)
MRC028
BFS520
MRC022
10
100
2