BFS520,115 NXP Semiconductors, BFS520,115 Datasheet - Page 4

• Manufacturer Part Number: BFS520,115
• Description: TRANS NPN 70MA 15V 9GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFS520,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.1dB ~ 2.1dB @ 900MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 6V
• Current - Collector (ic) (max): 70mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 20mA @ 6V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1654-2; 934021420115; BFS520 T/R

NXP Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
C re
(pF)
I
Fig.4
C
(mW)
P
= 0; f = 1 MHz.
tot
400
300
200
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
0
Feedback capacitance as a function of
collector-base voltage.
Fig.2 Power derating curve.
2
50
4
100
6
150
8
V
T
CB
MRC030 - 1
s
MRC021
(
o
C)
(V)
200
10
4
handbook, halfpage
handbook, halfpage
V
Fig.3
(GHz)
f = 1 GHz; T
Fig.5
CE
h FE
f T
200
150
100
= 6 V; T
50
12
10
10
8
6
4
2
0
0
1
−2
DC current gain as a function of collector
current.
Transition frequency as a function of
collector current.
amb
j
= 25 C.
= 25 C.
10
−1
10
1
V
CE
Product specification
I C (mA)
10
= 8 V
3 V
I C (mA)
MRC028
BFS520
MRC022
10
100
2