NE68519-T1-A CEL, NE68519-T1-A Datasheet - Page 13

TRANSISTOR NPN 2GHZ SMD

NE68519-T1-A

Manufacturer Part Number
NE68519-T1-A
Description
TRANSISTOR NPN 2GHZ SMD
Manufacturer
CEL
Datasheet

Specifications of NE68519-T1-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
6V
Frequency - Transition
12GHz
Noise Figure (db Typ @ F)
1.5dB ~ 2.5dB @ 2GHz
Gain
7.5dB
Power - Max
125mW
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 3V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
Mini 3P
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Power Dissipation
125 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SC5010-T1-A
NE68519-ATR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE68519-T1-A
Manufacturer:
CEL
Quantity:
50 937
Part Number:
NE68519-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
SCHEMATIC
NE68533 NONLINEAR MODEL
Parameters
RBM
VAR
CJE
MJE
CJC
VJC
VAF
VJE
ISE
IKR
ISC
IRB
IKF
NR
NF
NE
BR
RE
RB
BF
NC
RC
IS
0.40e-12
0.18e-12
7.9e-13
Infinity
7e-16
0.009
0.19
2.19
1.08
12.4
8.34
0.81
0.75
109
Q1
1.3
0.5
15
10
10
1
1
0
2
Parameters
XCJC
MJC
MJS
XTB
CJS
VJS
XTF
VTF
PTF
ITF
XTI
FC
TR
EG
TF
KF
AF
Base
C
BEPKG
L
BX
2e-12
0.011
0.34
0.75
4.58
1e-9
1.11
Q1
0.5
5.2
0
0
0
0
3
0
0
1
L
B
(1)
C
C
CBPKG
CB
Emitter
L
L
E
EX
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
ADDITIONAL PARAMETERS
C
CE
Parameters
Parameter
time
capacitance
inductance
resistance
voltage
current
C
C
L
L
C
C
C
L
L
L
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
C
Q1
CEPKG
L
CX
0.05 to 3.0 GHz
V
7/97
CE
= 0.5 V to 6 V, I
Collector
seconds
farads
henries
ohms
volts
amps
0.13e-12
0.14e-12
0.85e-9
1.15e-9
0.15e-12
0.1e-12
0.05e-12
0.3e-9
0.3e-9
0.3e-9
C
68533
Units
= 0.5 mA to 20 mA
NE685 SERIES

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