NE68519-T1-A CEL, NE68519-T1-A Datasheet - Page 4

• Manufacturer Part Number: NE68519-T1-A
• Description: TRANSISTOR NPN 2GHZ SMD
• Manufacturer: CEL

Specifications of NE68519-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 12GHz
• Noise Figure (db Typ @ F): 1.5dB ~ 2.5dB @ 2GHz
• Gain: 7.5dB
• Power - Max: 125mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 10mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: Mini 3P
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Power Dissipation: 125 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SC5010-T1-A; NE68519-ATR

NE685 SERIES
TYPICAL PERFORMANCE CURVES
180
200
100
100
200
180
0
3
5
4
2
0
1
0
0
0
1
V
f = 2 GHz
D.C. POWER DERATING CURVE
D.C. POWER DERATING CURVE
FREE AIR
CE
Ambient Temperature, T
Ambient Temperature, T
vs. COLLECTOR CURRENT
= 3 V
2
Collector Current, I
38.4
NE68533, NE68539
NE68518, NE68530
NOISE FIGURE
FREE AIR
50
50
5
INFINITE
HEAT SINK
INFINITE
HEAT SINK
10
100
100
C
(mA)
114
A
A
114
20
(C°)
(°C)
150
150
50
(TA = 25°C)
150
200
180
125
100
50
40
30
20
10
12
10
50
0
8
6
2
0
4
0
0
0.1
1
V
I
AND MAXIMUM AVAILABLE GAIN
C
V
f = 2 GHz
D.C. POWER DERATING CURVE
CE
= 10 mA
CE
FORWARD INSERTION GAIN
Ambient Temperature, T
= 3 V
= 3 V
0.2
FREE AIR
2
COLLECTOR CURRENT
Collector Current, I
INSERTION GAIN vs.
Frequency, f (GHz)
vs. FREQUENCY
50
NE68519
0.5
5
INFINITE
HEAT SINK
|S
1.0
10
21E
100
MAG
|
C
2
(mA)
A
114
2.0
20
(C°)
150
5.0
50