BFR 193W E6327 Infineon Technologies, BFR 193W E6327 Datasheet
BFR 193W E6327
Specifications of BFR 193W E6327
BFR193WE6327
BFR193WE6327INTR
BFR193WE6327XT
SP000011057
Related parts for BFR 193W E6327
BFR 193W E6327 Summary of contents
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NPN Silicon RF Transistor* For low noise, high-gain amplifiers GHz For linear broadband amplifiers GHz 900 MHz T Pb-free (RoHS compliant) package Qualified according AEC Q101 * Short term ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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... MJS = 3 XTI = - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www ...
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Total power dissipation P 600 mW 500 450 400 350 300 250 200 150 100 Permissible Pulse Load totmax totDC ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT323 2 ±0.2 0.1 MAX. +0.1 3x 0.3 -0.05 0 0.65 0.65 0.2 0.6 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...