BFP 193 E6327 Infineon Technologies, BFP 193 E6327 Datasheet - Page 6

TRANSISTOR NPN RF 12V SOT-143

BFP 193 E6327

Manufacturer Part Number
BFP 193 E6327
Description
TRANSISTOR NPN RF 12V SOT-143
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFP 193 E6327

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain
12dB ~ 18dB
Power - Max
580mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
8 GHz
Collector- Emitter Voltage Vceo Max
12 V
Continuous Collector Current
0.08 A
Power Dissipation
580 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP 193 E6327
BFP193E6327INTR
BFP193E6327XT
SP000011024
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.8
0.2
+0.1
-0.05
Pin 1
Package SOT143
2.9
4
1.9
1.7
1
RF s
±0.1
4
0.8
3
3.15
2
0.4
1.2
0.8
1.2
+0.1
-0.05
B
6
0.8
0.25
0.8
M
Manufacturer
2005, June
Date code (YM)
BFP181
Type code
B
0.2
1.15
0.2
M
A
1
0.1 MAX.
±0.1
A
2007-04-20
BFP193

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