BFP 193W E6327 Infineon Technologies, BFP 193W E6327 Datasheet - Page 5
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BFP 193W E6327
Manufacturer Part Number
BFP 193W E6327
Description
TRANSISTOR NPN RF 12V SOT-343
Manufacturer
Infineon Technologies
Datasheet
1.BFP_193W_E6327.pdf
(7 pages)
Specifications of BFP 193W E6327
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
8GHz
Noise Figure (db Typ @ F)
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain
13.5dB ~ 20.5dB
Power - Max
580mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 30mA, 8V
Current - Collector (ic) (max)
80mA
Mounting Type
Surface Mount
Configuration
Single Dual Emitter
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Maximum Operating Frequency
8 GHz
Collector- Emitter Voltage Vceo Max
12 V
Continuous Collector Current
0.08 A
Power Dissipation
580 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BFP 193W E6327
BFP193WE6327INTR
BFP193WE6327XT
SP000011026
BFP193WE6327INTR
BFP193WE6327XT
SP000011026
Total power dissipation P
Permissible Pulse Load
P
totmax
mW
10
10
10
600
500
450
400
350
300
250
200
150
100
50
-
0
2
1
0
10
0
/ P
-7
totDC
20
10
-6
=
40
10
-5
( t
p
60
)
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
80
10
tot
-3
100
= ( T
10
-2
120 °C
S
)
s
T
t
p
S
150
10
0
5
Permissible Pulse Load R
K/W
10
10
10
10
3
2
1
0
10
-7
10
-6
10
-5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
-4
10
thJS
-3
2007-04-20
10
BFP193W
=
-2
( t
t
p
s
p
)
10
0