MMBT5179 Fairchild Semiconductor, MMBT5179 Datasheet - Page 2

• Manufacturer Part Number: MMBT5179
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5179

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 2GHz
• Noise Figure (db Typ @ F): 5dB @ 200MHz
• Gain: 15dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 3mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 2000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 25 @ 3mA @ 1V
• Dc Current Gain Hfe Max: 250
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBT5179TR

SMALL SIGNAL CHARACTERISTICS
FUNCTIONAL TEST
OFF CHARACTERISTICS
ON CHARACTERISTICS
V
V
V
I
h
V
V
f
C
h
rb’C
NF
G
P
Symbol
CBO
T
FE
fe
CEO(
(BR)CBO
(BR)EBO
CE(
BE(
cb
O
pe
*
Spice Model
NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176
Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n
Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10)
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
c
sus
)
)
)
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Collector Base Time Constant
Noise Figure
Amplifier Power Gain
Power Output
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
f = 100 MHz
V
I
f = 1.0 kHz
I
f = 31.9 MHz
I
R
V
f = 200 MHz
V
f
I
C
C
E
C
C
C
C
f = 0.1 to 1.0 MHz
C
C
C
CB
CB
CB
CE
CB
S
= 3.0 mA, I
= 1.0 A, I
= 10 A, I
= 3.0 mA, V
= 10 mA, I
= 10 mA, I
= 5.0 mA, V
= 2.0 mA, V
= 2.0 mA, V
= 1.5 mA, V
= 50 , f = 200 MHz
500 MHz
= 15 V, I
= 15 V, T
= 10 V, I
= 6.0 V, I
= 10 V, I
Test Conditions
C
E
B
B
E
E
E
B
C
A
= 0
CE
= 1.0 mA
= 1.0 mA
CE
= 0,
CE
CB
CE
= 0
= 0
= 12 mA,
= 0
= 150 C
= 5.0 mA,
= 1.0 V
= 6.0 V,
= 6.0 V,
= 6.0 V,
= 6.0 V,
NPN RF Transistor
Min
900
2.5
3.0
12
20
25
25
15
20
Max
2000
0.02
250
300
1.0
0.4
1.0
1.0
5.0
14
(continued)
Units
MHz
mW
dB
dB
pF
ps
V
V
V
V
V
A
A
3