MMBT5179 Fairchild Semiconductor, MMBT5179 Datasheet - Page 3

• Manufacturer Part Number: MMBT5179
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT5179

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 2GHz
• Noise Figure (db Typ @ F): 5dB @ 200MHz
• Gain: 15dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 3mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 2000 MHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 25 @ 3mA @ 1V
• Dc Current Gain Hfe Max: 250
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBT5179TR

Typical Characteristics
250
200
150
100
100
0.1
1.2
0.8
0.6
0.4
50
10
0.001
1
0
1
25
0.1
Voltage vs Collector Current
V
V
Base-Emitter Saturation
CB
CE
vs Ambient Temperature
Collector-Cutoff Current
I
= 20V
125 ° C
=
T - AMBIENT TE MPERATURE ( C)
vs Collector Current
C
50
I
A
C
- COLLE CTOR CURRENT ( mA)
5V
DC Current Gain
- COLLECTOR CURRE NT (A)
- 40 °C
25 ° C
25 °C
75
1
125 °C
0.01
- 40 °C
100
125
10
°
=
10
20 30
150
0.1
625
500
375
250
125
0.15
0.05
0.8
0.6
0.4
0.2
0.2
0.1
0
1
0.01
0
0.1
SOT-23
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
- 40 °C
=
25
10
Ambient Temperature
Power Dissipation vs
I
I
C
C
Collector Current
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
0.1
TEMPERATURE ( C)
50
TO-92
25 °C
25 °C
125 °C
1
NPN RF Transistor
75
1
100
o
- 40 °C
V
125 °C
CE
10
125
10
=
(continued)
5V
20 30
150
50