PRF957,115 NXP Semiconductors, PRF957,115 Datasheet - Page 3

• Manufacturer Part Number: PRF957,115
• Description: TRANSISTOR SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PRF957,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 8.5GHz
• Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
• Power - Max: 270mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8500 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1177-2; 934043090115; PRF957 T/R

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System IEC 134.
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
1999 Jul 23
V
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
C
C(AV)
stg
j
CBO
CEO
EBO
tot
th j-s
UHF wideband transistor
s
s
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
average collector current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction
to soldering point
PARAMETER
PARAMETER
open emitter
open base
open collector
T
P
s
tot
= 60 C; note 1
= 270 mW; T
3
CONDITIONS
CONDITIONS
s
= 60 C; note 1
MIN.
65
VALUE
Product specification
425
20
10
1.5
100
100
270
+150
175
MAX.
PRF957
UNIT
K/W
V
V
V
mA
mA
mW
UNIT
C
C