BFG310W/XR,115 NXP Semiconductors, BFG310W/XR,115 Datasheet - Page 9

• Manufacturer Part Number: BFG310W/XR,115
• Description: TRANS NPN 6V 10MA 14GHZ SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BFG310W/XR,115

• Package / Case: CMPAK-4
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 6V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1dB @ 2GHz
• Gain: 18dB
• Power - Max: 60mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 3V
• Current - Collector (ic) (max): 10mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60 @ 5mA @ 3V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 14 GHz
• Collector- Emitter Voltage Vceo Max: 6 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 10 mA
• Power Dissipation: 60 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1976-2; 934057941115; BFG310W/XR T/R

Philips Semiconductors
9. Package outline
Fig 10. Package outline SOT343R
9397 750 14245
Product data sheet
Plastic surface mounted package; reverse pinning; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343R
1.1
0.8
A
w
M
max
0.1
A 1
B
3
2
0.4
0.3
b p
y
b p
IEC
0.7
0.5
b 1
e 1
D
e
0.25
0.10
c
b 1
JEDEC
2.2
1.8
D
4
1
REFERENCES
0
Rev. 01 — 2 February 2005
1.35
1.15
E
B
1.3
e
scale
EIAJ
1
1.15
e 1
A
2.2
2.0
H E
A 1
2 mm
0.45
0.15
L p
0.23
0.13
H E
Q
E
detail X
NPN 14 GHz wideband transistor
PROJECTION
0.2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
v
EUROPEAN
L p
BFG310W/XR
0.2
w
A
Q
c
0.1
y
v
X
ISSUE DATE
M
97-05-21
A
SOT343R
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