AT-41486-BLKG Avago Technologies US Inc., AT-41486-BLKG Datasheet - Page 2

• Manufacturer Part Number: AT-41486-BLKG
• Description: TRANS SIL LOW NOISE BIPOL 45MD
• Manufacturer: Avago Technologies US Inc.
• Type: Low Noiser

Specifications of AT-41486-BLKG

• Package / Case: 4-SMD (86 Plastic)
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
• Gain: 9dB ~ 18dB
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 8V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30 at 10 mA at 8 V
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 60 mA
• Maximum Dc Collector Current: 0.06 A
• Power Dissipation: 500 mW
• Maximum Operating Frequency: 8000 MHz
• Maximum Operating Temperature: + 150 C
• Current, Collector: 60 mA
• Current, Gain: 150
• Frequency: 8 GHz
• Package Type: 86 Plastic
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 165 °C/W
• Voltage, Breakdown, Collector To Emitter: 12 V
• Voltage, Collector To Base: 20 V
• Voltage, Collector To Emitter: 12 V
• Voltage, Emitter To Base: 1.5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1857; AT-41486-BLKG

AT-41486 Absolute Maximum Ratings
Ordering Information
Note: Order part number with a “G” suffix if lead-free option
is desired.
Electrical Specifications, T
Note:
1. For this test, the emitter is grounded.
Symbol
|S
P
G
NF
G
f
h
I
I
C
Symbol
Part Numbers
AT-41486-BLK
AT-41486-BLKG
AT-41486-TR1
AT-41486-TR1G
AT-41486-TR2
AT-41486-TR2G
T
CBO
EBO
1 dB
FE
CB
1 dB
A
21E
V
V
V
T
O
P
EBO
CBO
CEO
I
T
STG
C
|
T
j
2
Insertion Power Gain; V
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Optimum Noise Figure: V
Gain @ NF
Gain Bandwidth Product: V
Forward Current Transfer Ratio; V
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
CE
= 8 V, I
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
O
C
; V
No. of Devices
= 25 mA
CE
Parameters and Test Conditions
= 8 V, I
1000
1000
4000
4000
A
100
100
= 25°C
[2,3]
CE
C
CE
CE
EB
= 10 mA
= 8 V, I
CB
CE
[1]
= 8 V, I
= 8 V, I
= 1 V
: V
= 8 V
= 8 V, I
Comments
CB
C
13" Reel
13" Reel
7" Reel
7" Reel
CE
Units
C
= 8 V, f = 1 MHz
C
= 25 mA
Bulk
Bulk
mW
mA
°C
°C
= 10 mA
= 25 mA
V
V
V
C
= 8 V, I
= 25 mA
C
Maximum
= 10 mA
Absolute
-65 to 150
500
150
1.5
20
12
60
f = 1.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
[1]
Notes:
1. Permanent damage may occur if
2. T
3. Derate at 6 mW/°C for
4. See MEASUREMENTS section
any of these limits are exceeded.
T
“Thermal Resistance” for more
information.
CASE
C
2
Thermal Resistance
> 68°C.
Units
dBm
GHz
dB
dB
dB
dB
µA
µA
pF
—
= 25°C.
θ
jc
= 165°C/W
Min.
17.0
30
Typ. Max.
17.5
11.5
18.0
13.5
18.0
13.0
0.25
150
1.4
1.7
3.0
9.0
8.0
[2,4]
270
1.8
0.2
1.0
: