MZ0912B50Y,114 NXP Semiconductors, MZ0912B50Y,114 Datasheet - Page 7

• Manufacturer Part Number: MZ0912B50Y,114
• Description: TRANSISTOR POWER NPN SOT443A
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B50Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 8dB
• Power - Max: 150W
• Current - Collector (ic) (max): 3A
• Mounting Type: Surface Mount
• Package / Case: SOT-443A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 933994040114; MZ0912B50Y TRAY; MZ0912B50Y TRAY

Philips Semiconductors
1997 Feb 18
handbook, full pagewidth
NPN microwave power transistor
V
CC
= 50 V; Z
Fig.7 Input impedance as a function of frequency, associated with optimum load impedance.
o
= 10
P
L
= 50 W.
j
j
0
0.2
0.2
0.5
0.5
0.2
1.215 GHz
0.5
0.960 GHz
1
7
1
1
2
5
2
2
10
MGL050
5
5
10
10
MZ0912B50Y
Product specification