2SC4098T106P Rohm Semiconductor, 2SC4098T106P Datasheet - Page 2

• Manufacturer Part Number: 2SC4098T106P
• Description: TRANS RF NPN 25V 50MA SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of 2SC4098T106P

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 300MHz
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 1mA, 6V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Npn: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 25V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 10mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-323
• No. Of Pins: 3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 50 mA
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 82
• Gain Bandwidth Product Ft: 300 MHz
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SC4098T106P; 2SC4098T106PTR

Electrical characteristics curves
○
2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K
c
www.rohm.com
Fig.7 Gain bandwidth product vs.emitter current
Fig.4 DC current gain vs. collector current ( )
200
100
1000
Fig.1 Ground emitter output characteristics
500
200
100
10
50
20
10
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0
8
6
4
2
0.2
−1
COLLECTOR TO EMITTER VOLTAGE : V
0.5 1
COLLECTOR CURRENT : I
−2
EMITTER CURRENT : I
2
I
B
=0μA
80
72
64
56
48
40
32
24
16
8
2
−5
4
5 10
−10
6
−20
20
E
(mA)
C
(mA)
Ta=25°C
Ta=25°C
50 100
V
8
V
CE
−50
CE
=6V
= 5V
CE
(V)
10
Fig.5 Collector-emitter saturation voltage
Fig.2 Ground emitter propagation characteristics
0.05
0.02
0.01
0.5
0.2
0.1
0.2
0.1
50
20
10
5
2
1
0.2
0
5
2
1
BASE TO EMITTER VOLTAGE : V
0.1
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
vs. collector current ( )
0.2
Fig.8 Capacitance vs. voltage
COLLECTOR CURRENT : I
I
0.5 1
C
/I
B
0.4
= 50
20
0.5
10
0.6
2
2/2
1
0.8 1.0 1.2 1.4 1.6
5 10
2
20
5
C
(mA)
50
V
Ta=25°C
I
I
f=1MHz
C
E
CE
10
=0A
=0A
: V
BE
= 6V
(V)
CB
EB
20
(V)
(V)
Fig.3 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage
200
100
0.05
0.02
0.01
50
20
10
0.2
0.1
100
Fig.9 Collector to base time constance
0.2
50
20
10
0.2
−0.1 −0.2
I
C
vs. collector current (
/I
0.5 1
COLLECTOR CURRENT : I
B
= 10
COLLECTOR CURRENT : I
vs. emitter current
0.5 1
EMITTER CURRENT : I
−0.5
2
2010.04 - Rev.C
2
5
−1
5 10
Data Sheet
V
10
CE
−2
= 5V
3 V
20
1 V
20
)
E
C
−5
V
C
Ta=25°C
(mA)
f=31.8MHz
(mA)
Ta = 25°C
50 100
(mA)
CE
50 100
=6V
−10