MX0912B351Y,114 NXP Semiconductors, MX0912B351Y,114 Datasheet - Page 8

• Manufacturer Part Number: MX0912B351Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MX0912B351Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.6dB
• Power - Max: 960W
• Current - Collector (ic) (max): 21A
• Mounting Type: Surface Mount
• Package / Case: SOT-439A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 934033550114; MX0912B351Y TRAY; MX0912B351Y TRAY

Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
handbook, full pagewidth
NPN microwave power transistor
V
V
CC
CC
= 50 V; Z
= 50 V; Z
Fig.8 Optimum load impedance as a function of frequency associated with input impedance.
Fig.7 Input impedance as a function of frequency associated with optimum load impedance.
o
o
= 5
= 5
P
P
L
L
= 325 W.
= 325 W.
j
j
j
j
0
0
0.2
0.2
0.2
0.2
0.960 GHz
0.5
0.5
0.5
0.5
0.2
0.2
1.215 GHz
1.215 GHz
0.5
0.5
0.960 GHz
1
1
8
1
1
1
1
2
2
5
5
2
2
2
2
10
10
MGL057
MGL058
5
5
5
5
10
10
10
10
MX0912B351Y
Product specification