MMBT918 Fairchild Semiconductor, MMBT918 Datasheet - Page 3

• Manufacturer Part Number: MMBT918
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT918

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 600MHz
• Noise Figure (db Typ @ F): 6dB @ 60MHz
• Gain: 15dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 3mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 600 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 @ 3 mA @ 1 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.1
100
90
80
70
60
50
40
30
20
0.8
0.6
0.4
5
1
25
0.1
1
0.1
Voltage vs Collector Current
V
V
Typical Pulsed Current Gain
CE
0.2
CB
Base-Emitter Saturation
vs Ambient Temperature
Collector-Cutoff Current
= 5V
= 10
= 20V
I
- 40 °C
T - AMBIENTTEMPERATURE ( C)
50
C
vs Collector Current
I - COLLECTOR CURRENT (mA)
A
C
- COLLECTOR CURRENT (mA)
0.5
125 °C
1
75
1
25 °C
25 °C
2
100
- 40 °C
5
125 °C
10
10
125
°
20
30
150
50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.25
0.15
0.05
100
0.1
0.3
0.2
0.1
10
1
1
0.1
0.1
0.1
Input and Output Capacitance
V
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
CE
= 5V
I
V
vs Reverse Voltage
= 10
I
C
C
CE
Collector Current
- COLLECTOR CURRENT (mA)
- COLLECTOR CURRENT (mA)
- COLLECTOR VOLTAGE (V)
- 40 °C
1
25 °C
1
1
NPN RF Transistor
Cib
25 °C
10
125 °C
f = 1.0 MHz
125 °C
- 40 °C
10
(continued)
Cob
10
100
30
20