MMBT918 Fairchild Semiconductor, MMBT918 Datasheet - Page 4

• Manufacturer Part Number: MMBT918
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBT918

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 600MHz
• Noise Figure (db Typ @ F): 6dB @ 60MHz
• Gain: 15dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 3mA, 1V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 600 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 @ 3 mA @ 1 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
1050
750
600
450
300
1000
900
150
Contours of Constant Noise Figure
500
200
100
0
50
20
10
1
0.1
V
ce
Gain Bandwidth Product
= 5V
vs Collector Current
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
0.5
NOISE FIG. (dB)
1
10
20
350
300
250
200
150
100
50
0
5
0
10
50
SOT-23
(continued)
Ambient Temperature
Power Dissipation vs
25
V
f = 60 MHz
CE
100
= 6.0V
TEMPERATURE ( C)
50
50
200
100
TO-92
75
100
°
90
80
70
60
50
40
15
12
9
6
3
0
0.1
0
100 MHz
300 MHz
Contours of Constant Gain
0.2
Small Signal Current Gain
125
Bandwidth Product (f )
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
vs Collector Current
C
C
2
0.5
150
1
600 MHz
4
NPN RF Transistor
5
6
900 MHz
10
20
f = 10 MHz
V = 10V
T
T = 25 C
8
CE
A
800 MHz
600 MHz
400 MHz
200 MHz
(continued)
50
°
100
10