MMBTH11 Fairchild Semiconductor, MMBTH11 Datasheet - Page 4
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MMBTH11
Manufacturer Part Number
MMBTH11
Description
TRANSISTOR RF NPN SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBTH11.pdf
(8 pages)
Specifications of MMBTH11
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTH11LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Common Emitter Y Parameters
500
200
100
14
12
10
28
24
20
16
12
10
8
6
4
2
0
8
4
0
1
0
0
0
I = 7.0 mA
f = 200 MHz
V
f = 45 MHz
C
V
Forward Transfer Admittance
f = 45 MHz
CE
CE
b
= 15V
= 15V
-b
ie
4
vs Collector Current
fe
I - COLLECTOR CURRENT (mA)
Input Admittance vs
Input Admittance vs
I - COLLECTOR CURRENT (mA)
4
4
C
C
Collector Current
V
Collector Voltage
CE
- COLLECTOR VOLTAGE
g
g
8
ie
ie
8
8
12
12
12
16
g
b
fe
ie
16
16
20
24
20
20
24
20
16
12
20
16
12
120
100
8
4
0
8
4
0
80
60
40
20
50
0
0
V
I = 7.0 mA
V
f = 200 MHz
0
C
CE
Forward Transfer Admittance
CE
V
f = 200 MHz
CE
= 15V
= 10V
= 10V
I - COLLECTOR CURRENT (mA)
Input Admittance vs
Input Admittance vs
vs Collector Current
2
I - COLLECTOR CURRENT (mA)
C
100
2
C
Collector Current
f - FREQUENCY (MHz)
Frequency
g
ie
b
4
4
ie
200
NPN RF Transistor
-b
b
g
g
ie
fe
ie
fe
6
6
500
MPSH11/MMBTH11, Rev. B
8
8
(continued)
1000
10
10
3