MMBTH11 Fairchild Semiconductor, MMBTH11 Datasheet - Page 8

• Manufacturer Part Number: MMBTH11
• Description: TRANSISTOR RF NPN SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTH11

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -

245 mHz
Input into
50
Test Circuits
50
Input
RF
LO
in
in
200 mHz Output into
50
R.F. Beads
FIGURE 3: 200 MHz Conversion Gain Test Circuit
0.002 F
1000 pF
(continued)
V
AGC
300 pF
2.0 pF
FIGURE 2: 45 MHz Power Gain Circuit
2.2 K
1/2 W
47 K
1000 pF
390
1/2 W
L
1
1000 pF
V
BB
4.0-30 pF
1.1 pF
V
2K
CE
1000 pF
1000 pF
270
1/2 W
V
CE
20pF
V
= 15 V
CC
= 12 V
T1
T
1
L1 - Ohmite RFC Z235
T1 - Primary 5 turns No. 34 wire 1/4 inch
diameter. Secondary runs No. 34 wire close
wound over a Q100 core (10.7 mHz). When
terminated on secondary side with 50 primary
measures 1.5 K, -25 pF.
T1 - Q3 Toroid 4:1 ratio
8 turns Pri. 2 turns Sec.
NPN RF Transistor
50
Output
45 mHz Output
into 50
MPSH11/MMBTH11, Rev. B
}
(continued)
No. 22 wire
3