BFR93AW,115 NXP Semiconductors, BFR93AW,115 Datasheet - Page 7

• Manufacturer Part Number: BFR93AW,115
• Description: TRANS NPN 12V 35MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BFR93AW,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 35mA
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: NPN
• Frequency - Transition: 5GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Noise Figure (db Typ @ F): 1.5dB @ 1GHz
• Dc Current Gain Hfe Max: 40 @ 30mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022950115::BFR93AW T/R::BFR93AW T/R

NXP Semiconductors
1995 Sep 18
handbook, halfpage
handbook, full pagewidth
NPN 5 GHz wideband transistor
V
f = 500 MHz; V
CE
(dB)
F
= 8 V.
Fig.10 Minimum noise figure as a function of
6
4
0
2
1
collector current; typical values.
CE
= 8 V; I
C
= 10 mA; Z
180
10
Fig.12 Common emitter noise figure circles; typical values.
o
o
= 50 
0
I C (mA)
f = 2 GHz
135
135
0.2
0.2
1 GHz
500 MHz
o
o
0.2
MGC901
0.5
0.5
10
2
0.5
90
90
7
F
1
1
1
min
o
o
handbook, halfpage
= 1.4 dB
V
CE
Γ
(dB)
opt
F = 2 dB
F = 4 dB
F = 3 dB
F
= 8 V.
Fig.11 Minimum noise figure as a function of
2
6
4
0
2
10
2
2
2
collector current; typical values.
5
45
45
o
o
5
5
MGC879
0
o
10
3
1.0
0.8
0.6
0.4
0.2
0
1.0
I C = 30 mA
10 mA
5 mA
Product specification
f (MHz)
BFR93AW
MGC900
10
4