BFG93A,215 NXP Semiconductors, BFG93A,215 Datasheet - Page 4

• Manufacturer Part Number: BFG93A,215
• Description: TRANS NPN 12V 35MA SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BFG93A,215

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SOT-143, SOT-143B, TO-253AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933821140215; BFG93A T/R; BFG93A T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
C re
(pF)
NPN 6 GHz wideband transistors
I
C
(mW)
P tot
= i
Fig.4
400
300
200
100
1.0
0.4
0.8
0.6
0.2
c
0
0
= 0; f = 1 MHz.
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.2 Power derating curve.
50
4
100
8
150
12
V
T s (
CB
MBG245
MCD088
o
C)
(V)
200
Rev. 05 - 26 November 2007
16
handbook, halfpage
handbook, halfpage
(GHz)
V
V
CE
CE
T f
h FE
Fig.3
Fig.5
120
= 5 V.
= 5 V; T
80
40
4
8
6
2
0
0
0
0
DC current gain as a function of collector
current; typical values.
amb
Transition frequency as a function of
collector current; typical values.
= 25 C; f = 500 MHz.
10
10
BFG93A; BFG93A/X
20
20
Product specification
30
I
C
I
C
(mA)
(mA)
MCD089
MCD087
4 of 13
40
30