AT-31033-TR1G Avago Technologies US Inc., AT-31033-TR1G Datasheet

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AT-31033-TR1G

Manufacturer Part Number
AT-31033-TR1G
Description
TRANS NPN BIPO 5.5V 16MA SOT-23
Manufacturer
Avago Technologies US Inc.
Datasheets

Specifications of AT-31033-TR1G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Noise Figure (db Typ @ F)
0.9dB ~ 1.2dB @ 900MHz
Gain
9dB ~ 11dB
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 1mA, 2.7V
Current - Collector (ic) (max)
16mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
5.5V
Transition Frequency Typ Ft
10GHz
Power Dissipation Pd
150mW
Dc Collector Current
16mA
Dc Current Gain Hfe
70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-31033-TR1G
Manufacturer:
AVAGO
Quantity:
1 651
Part Number:
AT-31033-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-31011, AT-31033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-31011 and AT-31033 are high performance
NPN bipolar transistors that have been optimized for op-
eration at low voltages, making them ideal for use in bat-
tery powered applications in wireless markets. The AT-
31033 uses the 3 lead SOT-23, while the AT-31011 places
the same die in the higher performance 4 lead SOT-143.
Both packages are industry standards compatible with
high volume surface mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 10 emitter finger interdigitated geometry
yields an extremely fast transistor with low operating
currents and reasonable impedances.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla-
tor, or active mixer. Applications include cellular and PCS
handsets as well as Industrial-Scientific-Medical systems.
Typical amplifier designs at 900 MHz yield 1.3 dB noise
figures with 11 dB or more associated gain at a 2.7 V, 1
mA bias. Moderate output power capability (+9 dBm
P
dynamic range for a microcurrent device. High gain ca-
pability at 1 V , 1 mA makes these devices a good fit for 900
MHz pager applications.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz f
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
1dB
) coupled with an excellent noise figure yields high
T
, 30 GHz f
max
Features
• High Performance Bipolar Transistor Optimized for
• 900 MHz Performance:
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-143 SMT Plastic Package
• Tape-And-Reel Packaging Option Available
• Lead-free
Pin Connections and Package Marking
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.
Low Current, Low Voltage Operation
AT-31011: 0.9 dB NF, 13 dB G
AT-31033: 0.9 dB NF, 11 dB G
EMITTER COLLECTOR
SOT-143 (AT-31011)
SOT-23 (AT-31033)
BASE
BASE
COLLECTOR
310x
310x
EMITTER
EMITTER
A
A

Related parts for AT-31033-TR1G

AT-31033-TR1G Summary of contents

Page 1

... P ) coupled with an excellent noise figure yields high 1dB dynamic range for a microcurrent device. High gain ca- pability makes these devices a good fit for 900 MHz pager applications. The AT-3 series bipolar transistors are fabricated using an optimized version of Avago’s 10 GHz f Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection ...

Page 2

... BOARD MATL = 0.062" FR-4 (ε = 4.8) DIMENSIONS IN MILS Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise Fig- ure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310 Geometries ...

Page 3

... FREQUENCY (GHz) Figure 5. AT-31011 and AT-31033 Power Gain Compression vs. Frequency and Current 2 AT-31011 fig 5 Note: 1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and including circuit losses 0.9 GHz ...

Page 4

... FREQUENCY (GHz) Figure 8. AT-31011 and AT-31033 Power Gain Compression vs. Frequency and Current AT-31011 fig 0.5 1.0 1.5 2.0 2.5 FREQUENCY (GHz) Figure 11. AT-31011 and AT-31033 Power Gain Compression vs. Frequency and Current AT-31011 fig 11 25 2 1 100 TEMPERATURE (° ...

Page 5

... Notes: 1. Matching constraints may make F values associated with high |Γ min in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured mA, Common Emitter Mag Ang dB 3.60 174 -37 ...

Page 6

... Notes: 1. Matching constraints may make F values associated with high |Γ min in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured 2 mA, Common Emitter Mag Ang dB 3.59 174 -39 ...

Page 7

... Notes: 1. Matching constraints may make F values associated with high |Γ min in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured 2 mA, Common Emitter Mag Ang dB 27.42 23 ...

Page 8

... Notes: 1. Matching constraints may make F values associated with high |Γ min in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured mA, Common Emitter Mag Ang dB 3.59 174 -40 ...

Page 9

... Notes: 1. Matching constraints may make F values associated with high |Γ min in physical circuits. See Figure 2 for expected performance. 2. 0.5 GHz noise parameter values are extrapolated, not measured mA, Common Emitter Mag Ang dB 23.46 162 -41 ...

Page 10

... Ordering Information Part Numbers No. of Devices AT-31011-BLKG AT-31033-BLKG AT-31011-TR1G AT-31033-TR1G AT-31011-TR2G AT-31033-TR2G Package Dimensions SOT-23 Plastic Package e2 e1 XXX SYMBOL Notes: e2 XXX-package marking Drawings are not to scale For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. ...

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