BFT93W,115 NXP Semiconductors, BFT93W,115 Datasheet - Page 8

• Manufacturer Part Number: BFT93W,115
• Description: TRANS PNP 12V 50MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFT93W,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 4GHz
• Noise Figure (db Typ @ F): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 30mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 20 @ 30mA @ 5V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934022970115; BFT93W T/R; BFT93W T/R

NXP Semiconductors
March 1994
PNP 4 GHz wideband transistor
V
CE
(dB)
= 5 V.
F
Fig.14 Minimum noise figure as a function of
6
4
0
2
1
collector current, typical values.
10
I
C
(mA)
1 GHz
500 MHz
MLB432
10
2
8
V
CE
(dB)
= 5 V.
Fig.15 Minimum noise figure as a function of
F
6
4
0
2
10
2
frequency, typical values.
10
I
3
C
30 mA
20 mA
10 mA
5 mA
=
Product specification
f (MHz)
BFT93W
MLB433
10
4