BFQ540,115 NXP Semiconductors, BFQ540,115 Datasheet - Page 4

• Manufacturer Part Number: BFQ540,115
• Description: TRANS NPN 12V 9GHZ SOT89
• Manufacturer: NXP Semiconductors

Specifications of BFQ540,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mounting Type: Surface Mount
• Power - Max: 1.2W
• Current - Collector (ic) (max): 120mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: NPN
• Frequency - Transition: 9GHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 40mA, 8V
• Noise Figure (db Typ @ F): 1.9dB ~ 2.4dB @ 900MHz
• Dc Current Gain Hfe Max: 100
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.12 A
• Power Dissipation: 1200 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934038980115::BFQ540 T/R::BFQ540 T/R

NXP Semiconductors
CHARACTERISTICS
T
Notes
1. d
2. d
3. I
V
V
V
I
I
h
f
C
C
V
d
F
SYMBOL
j
CBO
EBO
T
s
FE
2
= 25 C unless otherwise specified.
(BR)CBO
(BR)CES
(BR)EBO
o
NPN wideband transistor
e
re
21
V
f
measured at f
V
measured at 2f
V
measured at f
p
C
im
im
p
p
p
2
= 795.25 MHz; f
= 40 mA; V
= V
= V
= V
= 60 dB (DIN45004B); V
= 60 dB (DIN 45004B); I
o
q
q
; V
= V
= 225 mV; f
collector-base breakdown voltage
collector-emitter breakdown voltage R
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
transition frequency
emitter capacitance
feedback capacitance
insertion power gain
output voltage
second order intermodulation
distortion
noise figure
q
o
= V
; f
CE
p
p
p
p
o
+ f
+ f
= 806 MHz; f
= 8 V; R
q
q
6 dB; V
q
f
q
PARAMETER
= 810 MHz.
p
= 803.25 MHz; f
= 802 MHz.
= 250 MHz; f
f
r
= 793.25 MHz.
L
r
= 50
= V
q
C
CE
o
= 810 MHz;
= 40 mA; V
= 8 V; I
6 dB;
q
r
= 560 MHz;
= 805.5 MHz;
C
= 40 mA; R
CE
Rev. 04 - 25 September 2007
= 8 V; R
open emitter; I
I
V
V
I
I
f
I
I
I
f = 900 MHz; T
note 1
note 2
note 3
I
f = 900 MHz;
E
C
C
m
C
C
C
C
CB
CB
BE
= 100 A; I
= 40 mA; V
= 40 mA; V
= i
= 0; V
= 40 mA; V
= 40 mA; V
= 1 GHz
= 0; I
= 8 V; I
= 1 V; I
e
= 0; V
L
L
= 50
CE
= 50 ;
C
CONDITIONS
= 40 A
= 8 V; f = 1 MHz
E
C
EB
= 0
C
= 0
CE
CE
CE
CE
C
amb
S
= 0
= 0.5 V; f = 1 MHz
= 10 A; I
= 8 V
= 8 V;
= 8 V;
= 8 V;
=
= 25 C
opt
E
= 0
20
15
2
100
12
MIN.
120
9
2
0.9
13
500
350
1.9
TYP.
Product specification
50
200
250
2.4
MAX.
BFQ540
53
4 of 8
V
V
V
nA
nA
GHz
pF
pF
dB
mV
mV
dB
dB
UNIT